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تاریخ بروز رسانی: 15:15:21 29/11/1391 آزمایشگاه تحقیقاتی نانوالکترونیک و لایه نازک


سرپرست آزمایشگاه:

بهرام عزیزالله گنجی، فوق دکتری نانو الکترونیک، عضو هیآت علمی دانشگاه صنعتی بابل



آزمایشگاه تحقیقاتی نانوالکترونیک و لایه نازک دانشگاه صنعتی بابل آزمایشگاهی است که در مسیر ارتقای دانش فنی در زمینه میکرو و نانو الکترونیک و سیستمهای ریز ماشین کاری MEMS & NEMS فعالیت می نماید. این آزمایشگاه طی بررسی نیاز صنایع مختلف و اجرای طرح های تحقیقاتی و اجرایی می تواند بسیاری از فرایند های ساخت انواع ادوات پیشرفته مانند سنسور ها و ترانزیستورها را انجام دهد.هدف فعلی آزمایشگاه، مطالعه و بررسی سیستمها و قطعات الکترونیکی و مکانیکی MEMS & NEMS بر روی بستر ویفر سیلیکون در زمینه نانو الکترونیک ولایه گذاری می باشد. از کاربردهای این فرآیندها، می توان به سنسورهای بسیار حساس، موتورهای بسیار ریز و سیستمهای محرک (تولید کننده حرکت) در مقیاس میکرو و نانو اشاره کرد.


MEMS/ NEMS & Nano Electronic LAB Equipments

 

Equipment

Description

Process

Picture

1

Name : LPCVD Furnace

 

 

 

Oxidation, diffusion and LPCVD (low pressure chemical vapor deposition) are available with this single system. Suitable for wafers of 3 to 8 inches size. The automated process inserts wafers into the process tube without contact.

- Oxidation process

- Diffusion process

- LPCVD process

 

 

http://cee.nit.ac.ir/file_part/view_part/g1.jpg


 

2

Name : DC/RF Sputtering System

 

 

 

 

 

 

 

- Reactive sputtering capable

- Dual target, RF & DC sputtering system

- DC up to 1500W (2A X 750V)

- RF up to 600W auto matching.

- Wafer up to 6”

- 5” target

 

- DC sputtering

- RF sputtering

- Sputter ;

   - Si (99.99%)

   - Cu (99%)

   - SiO2(99.5%)

   - Si3N4

   - SiCr


 
http://cee.nit.ac.ir/file_part/view_part/g2.jpg

 

3

Name : Plasma Enhanced Chemical Vapor Deposition

 

 

 

The Plasma Enhanced Chemical Vapor Deposition (PECVD) machine is used to deposit thin dielectric films. It combines up to four gases at pressures between 0.1 and 1 Torr and uses an RF source of up to 200 Watts to ionize the resultant gas mixture, causing film deposition on a heated substrate.

 

Thin film deposition (Si3H4 & SiO2)

 


http://cee.nit.ac.ir/file_part/view_part/g3.jpg


4

Name : Laser Write

 

 

 

 

 

 

 

 

- The  Laser Write  is a high-resolution imaging system capable of achieving over 500,000 dpi using a 40-nanometer writeable address grid. A 442 nm He-Cd laser is used to perform the imaging and is capable of producing a minimum feature size of 500 nm.

- Direct write laser lithography system

- Write lens 4 mm

- Laser source – He-Cd

- Input format – Gds & Cif

                                      

lithography system

 

 http://cee.nit.ac.ir/file_part/view_part/g4.jpg

 

5

Name : Oxidation Furnace

 

The annealing furnace is used for annealing at high temperature and for diffusion drive-in. Furnace temperature can up to 1100C for oxidation process.

- Dry oxidation process

- Wet oxidation process

- Diffusion process ( Drive-In)

- Annealing

 

 

 http://cee.nit.ac.ir/file_part/view_part/g5.jpg

 

6

Name : E-beam Evaporator

 

 

 

 

 

 

 

The E-Beam evaporator is used to deposit different materials (mostly metals) that are vaporised at high temperature obtained by the collision energy of electrons. The system has also provision for standard thermal evaporation.

- Evaporation Al
- Evaporation Cr
- Evaporation Cr/Au

- Evaporation Cu
- Evaporation Fe
- Evaporation Ni

- Evaporation Ta
- Evaporation Ti/Au
- Training

 


http://cee.nit.ac.ir/file_part/view_part/g6.jpg

 

7

Name : Metal evaporator

 

The mini deposition system is a compact turbo-pumped vacuum deposition system. The metal evaporator is used to create Al thin layer for contacts pad.

- Evaporation

- Al thin film

 

 

 http://cee.nit.ac.ir/file_part/view_part/g7.jpg

 

8

Name : Sputter Coater

 

It is used to sputter gold for SEM specimen and other material to create thin layer.

- Sputter thin layer

- Gold Au

- Platinum Pt

- Copper Cu

- Aluminum Al

- Chromium Cr

 

 

http://cee.nit.ac.ir/file_part/view_part/g8.jpg

 

 

 

 

 

 

 

ETCHING

9

Name : Deep RIE

 

 

It can be configured to carry out Reactive ion Etching (RIE)

Deep reactive ion etching.

 

http://cee.nit.ac.ir/file_part/view_part/g9.jpg

 

10

Name : Electrochemical Etch System

 

 

 

 

The electrochemical etch system is one of the most cost-effective, convenient and precise technique for fabricating thin, mono- crystalline silicon membranes. It is based on the different etching potentials of n- and p-typed doped silicon layers in alkaline etching solutions such as potassium hydroxide.

Etching process

 

 

 http://cee.nit.ac.ir/file_part/view_part/g10.jpg

 

11

Name : Plasma Enhanced Chemical Vapor Deposition (PECVD /RIE)

 

 

 

 

Plasma Enhanced Chemical Vapour Deposition process

 

 http://cee.nit.ac.ir/file_part/view_part/g11.jpg

 

 

 

 

 

 

 

 LITHOGRAPHY

12

Name : Mask Aligner

 

The exposure system is an optical contact aligner which transfer a pattern from a glass mask to a photoresist coated wafer by exposing it to ultraviolet light with wavelengths of 365 µm or 320 µm.

Can handle 1mm pieces up to 3-inch wafers.

Photolithography –

Resist available ;

- AZ7212
- AZ1500

- AZ4620

- AZ5214

 

 

http://cee.nit.ac.ir/file_part/view_part/g12.jpg

13

Name : Resist Spin Coater

 

Resist Spin Coater is used for

photoresist and spin-on diffusant

- Photoresist process

- Spin-on diffusant process

 

 

 http://cee.nit.ac.ir/file_part/view_part/g13.jpg

 

14

Name : Thermolyne Hotplate

 

The hotplates are used for baking photoresist during photolithography process.

- Dehydration bake

- Softbake

- Hardbake

- Postbake

 

 

 
http://cee.nit.ac.ir/file_part/view_part/g14.jpg

15

Name : Ceramic Hotplate

 

The hotplates are used for baking photoresist during photolithography process.

- Dehydration bake

 

 http://cee.nit.ac.ir/file_part/view_part/g15.jpg

 

 

 

 

 

 

 

CHARACTERIZATION

16

Name : Scanning Electron Microscope

 

 

 

 

 

The fine electron source of the single crystal system enables the attainment of much higher brightness source with a higher resolution images than a conventional tungsten filament SEM. Useful magnifications in excess of 200,000 times are obtainable, which translate to a resolution of 3.5nm at an accelerating voltage of 30kV

- High resolution imaging

- X-ray mircoanalysis

- Low magnification performance.

 

 http://cee.nit.ac.ir/file_part/view_part/g16.jpg

 

17

Name : surface profiler

 

 

 

 

 

 

The surface profiler is a tool that can measure a wide variety of surfaces and samples, from optical-quality glass to automotive parts. In order to help you to become familiar with the operation of your  surface profiler quickly, this guide will

walk you through the step-by-step VSI and PSI measurement process using representative samples.

2D & 3D surface measurement

 

 

 http://cee.nit.ac.ir/file_part/view_part/g17.jpg

 

 

18

Name : Material Workstation

 

 

 

 

High resolution, precision imaging allows its users to get an accurate, detailed view of their work. The Material Workstation is also equipped with a video camera and computer linkup which makes capturing and sharing the microscopes images simple.

Lens:

X10 – 123µ

X20 – 60µ

X50 – 24µ

X100 –  10µ

 

 

 http://cee.nit.ac.ir/file_part/view_part/g_18.jpg

 

19

Name : Thickness Mapping System

 

- Automated Thin-Film Thickness Mapping System

- Thin-film thickness is mapped quickly and easily with the F50 advanced spectral reflectance system. The motorized R-0 stage moves automatically to selected

measurement points and provides thickness measurements in seconds.

- SiO2 SiNX DLC

- Photoresist Polymer layers

- Polyimide

- Polysilicon

- Amorphous Silicon

 

 

 http://cee.nit.ac.ir/file_part/view_part/g19.jpg

 

 

20

Name :  Probe station

 

The probe station is used to enable electrical connection between the un-encapsulated devices on the wafer and the measuring equipment. The probe station consists of microscope connected with high resolution digital camera, vacuum chuck for holding the wafer, Micropositioner in x, y and radial direction, illuminator, probe needles with micropositioner and coaxial connectors for connecting the probe with the measuring instruments.

Suitable for measurement of low frequency electrical characteristics :

- I-V Measurement

- C-V Measurement

- LCR Impedance analyzer

- Voltage gain measurement

- Input and output signal analysis

- Input and output power analysis

 

http://cee.nit.ac.ir/file_part/view_part/g_20.jpg

21

Name :  Oscilloscope

 

It is a 50 MHz Analog-Oscilloscope with 2 input channels and single time base.
Vertical sensitivity up to 500µV/division (5mV x 10). HF/LF reject trigger filters. Horizontal alternate sweep magnifications of x 5, x 10 or x 50 selectable. Peak to peak auto triggering.

 

 

 

http://cee.nit.ac.ir/file_part/view_part/g21.jpg

 

22

Name :  Function Generator

 

Function generator

Frequency setting ;

- X 10 Hz to X 1M Hz

-Fine amplitude

 3V/10V

- Sine

- Square

- Output signal 600Ώ/50 Ώ

 

Frequency generator

 

http://cee.nit.ac.ir/file_part/view_part/g22.jpg


23

Name :  TENCOR surface profiler

 

A computerized, highly sensitive surface profiler that measures roughness, waviness, step height, and other surface characteristics in a variety of applications.

Sample Size up to 200 mm

 

 

http://cee.nit.ac.ir/file_part/view_part/g23.jpg


 

 

 

 

 

 

Other machines

 

 

 

24

Name :  Wire bonding system

 

Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication.

 - High-end Negative EFO with Missing Ball Detect
-PLL Ultrasonic Generator
- High Q 60 kHz Ultrasonic Transducer
- 2 Channel Independent Bonding Parameters
- Semi-Auto and Manual Z Bonding Modes
- Built-in Digital Temperature Controller

The wire is generally made up of one of the following:

- Gold

- Aluminum

- Copper

 

 

 http://cee.nit.ac.ir/file_part/view_part/g24.jpg

 

 

 

25

Name :  Ultrasonic Cleaner

 

Ultrasonic sound is sound transmitted at frequencies beyond the range or human hearing. The Bransonic cleaner operators at ultrasonic frequencies for cleaning.

Wafer cleaning process

 

 

 http://cee.nit.ac.ir/file_part/view_part/g25.jpg

 

26

Name :  Wafer scriber

 

The scriber can handle scribing a wafer up to 4” in diameter.  The units on the scriber are set to microns..  The scriber can measure in 1-micron increments.  The minimum space between scribes is 20 microns and the maximum space is 10000 microns.

The scriber can make up to 40000 scribes in a 200x200 grid.

 

 http://cee.nit.ac.ir/file_part/view_part/g26.jpg

 

27

Name :  General purpose oven

 

 

 

 

 http://cee.nit.ac.ir/file_part/view_part/g27.jpg

 

28

Name :  DI water system

 

 

 

 

 

 

 

Deionized water  is water that lacks ions, such as cations from sodium, calcium, iron, copper and anions such as chloride and bromide. This means it has been purified from all other ions except H3O+ and OH−, but it may still contain other non-ionic types of impurities such as organic compounds. This type of water is produced using an ion exchange process. Deionized water is similar to distilled water, in that it is useful for scientific experiments where the presence of impurities may be undesirable.

For cleaning and washing sample.

 

 http://cee.nit.ac.ir/file_part/view_part/g28.jpg

 

 

29

Name :  Chemical freezer

 

Chemical storage

Acid

 

 

 http://cee.nit.ac.ir/file_part/view_part/g29.jpg

 

30

Name :  LAB REFRIGERATOR

 

Chemical storage

 

 


http://cee.nit.ac.ir/file_part/view_part/g30.jpg

 

 

31

Name :  Fumehood / Wet bench

 

 

 

Wet Benches" are stations for wet etching and cleaning of wafers and devices.

Etching and cleaning of wafers and devices

 

 http://cee.nit.ac.ir/file_part/view_part/g31.jpg

 

 

 

32

Name :  Dry cabinet

 

 

Wafers and devices storage.

 

 

 http://cee.nit.ac.ir/file_part/view_part/g32.jpg

 

 

 

 

SOFTWARE

33

Name : 

 

 

MEMS simulation

 

 

 http://cee.nit.ac.ir/file_part/view_part/g33.jpg

 

 















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